Transistors - IGBTs - Single
- Gate Charge：
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- Operating Temperature：
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- Package / Case：
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- Reverse Recovery Time (trr)：
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- Supplier Device Package：
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- Switching Energy：
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- Td (on/off) @ 25°C：
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- Vce(on) (Max) @ Vge, Ic：
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- Voltage - Collector Emitter Breakdown (Max)：
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4 Records
| Image | Part | Manufacturer | Description | Price | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Toshiba Electronic Devices and Storage Corporation | D-IGBT TO-247 VCES=... |
-
|
27
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | DISCRETE IGBT TR... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | DISCRETE IGBT TR... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | DISCRETE IGBT TR... |
-
|
35,000
In-stock
|
Get Quote |
