Transistors - IGBTs - Single

Gate Charge:
Operating Temperature:
Package / Case:
Power - Max:
Product Status:
Reverse Recovery Time (trr):
Supplier Device Package:
Switching Energy:
Td (on/off) @ 25°C:
Test Condition:
Vce(on) (Max) @ Vge, Ic:
Voltage - Collector Emitter Breakdown (Max):
Image Part Manufacturer Description Price Stock Action
GT30N135SRA,S1E Toshiba Electronic Devices and Storage Corporation
D-IGBT TO-247 VCES=...
-
46
In-stock
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GT60N321(Q) Toshiba Electronic Devices and Storage Corporation
IGBT 1000V 60A 170W TO...
-
35,000
In-stock
Get Quote
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