G4S12020BM

Mfr.Part #
G4S12020BM
Manufacturer
Global Power Technology Co. Ltd
Package/Case
-
Datasheet
G4S12020BM
Description
SIC SCHOTTKY DIODE 1200V 20A 3-P
Stock
35000

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Manufacturer :
Global Power Technology Co. Ltd
Product Category :
Discrete Semiconductor Products > Diodes - Rectifiers - Arrays
Current - Average Rectified (Io) (per Diode) :
33.2A (DC)
Current - Reverse Leakage @ Vr :
30 µA @ 1200 V
Diode Configuration :
1 Pair Common Cathode
Diode Type :
Silicon Carbide Schottky
Mounting Type :
Through Hole
Operating Temperature - Junction :
-55°C ~ 175°C
Package / Case :
TO-247-3
Product Status :
Active
Reverse Recovery Time (trr) :
0 ns
Speed :
No Recovery Time > 500mA (Io)
Supplier Device Package :
TO-247AB
Voltage - DC Reverse (Vr) (Max) :
1200 V
Voltage - Forward (Vf) (Max) @ If :
1.6 V @ 10 A
Datasheets
G4S12020BM

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