TPAR3J S1G

Mfr.Part #
TPAR3J S1G
Manufacturer
Taiwan Semiconductor
Package/Case
-
Datasheet
TPAR3J S1G
Description
DIODE AVALANCHE 600V 3A TO277A
Stock
2849

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Manufacturer :
Taiwan Semiconductor
Product Category :
Discrete Semiconductor Products > Diodes - Rectifiers - Single
Capacitance @ Vr, F :
58pF @ 4V, 1MHz
Current - Average Rectified (Io) :
3A
Current - Reverse Leakage @ Vr :
10 µA @ 600 V
Diode Type :
Avalanche
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 175°C
Package / Case :
TO-277, 3-PowerDFN
Product Status :
Active
Reverse Recovery Time (trr) :
120 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
TO-277A (SMPC)
Voltage - DC Reverse (Vr) (Max) :
600 V
Voltage - Forward (Vf) (Max) @ If :
1.55 V @ 3 A
Datasheets
TPAR3J S1G

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