IDB18E120ATMA1

Mfr.Part #
IDB18E120ATMA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
IDB18E120ATMA1
Description
DIODE GEN PURP 1.2KV 31A TO263-3
Stock
35000

Request A Quote(RFQ)

* Contact Name:
  Company:
* E-Mail:
  Whatsapp:
  Comment:
Manufacturer :
Infineon Technologies
Product Category :
Discrete Semiconductor Products > Diodes - Rectifiers - Single
Capacitance @ Vr, F :
-
Current - Average Rectified (Io) :
31A
Current - Reverse Leakage @ Vr :
100 µA @ 1200 V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status :
Obsolete
Reverse Recovery Time (trr) :
195 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
PG-TO263-3-2
Voltage - DC Reverse (Vr) (Max) :
1200 V
Voltage - Forward (Vf) (Max) @ If :
2.15 V @ 18 A
Datasheets
IDB18E120ATMA1

Manufacturer related products

Catalog related products

  • ROHM Semiconductor
    DIODE SCHOTTKY 650V 10A TO263AB
  • SMC Diode Solutions
    STANDARD RECTIFIER 1000V SOD-123
  • Diodes Incorporated
    DIODE SCHOTTKY 30V 200MA SOT23-3
  • onsemi
    DIODE GEN PURP 100V 200MA SOD123
  • Comchip Technology
    DIODE GEN PURP 1KV 1A DO41

Related products

Part Manufacturer Stock Description
IDB10S60C Infineon Technologies 35,000 DIODE SILICON 600V 10A D2PAK
IDB10S60CATMA2 Infineon Technologies 35,000 DIODE SCHOTTKY 600V 10A D2PAK
IDB12E120ATMA1 Infineon Technologies 35,000 DIODE GEN PURP 1.2KV 28A TO263-3
IDB15E60 Infineon Technologies 35,000 DIODE GEN PURP 600V 29.2A TO263
IDB15E60ATMA1 Infineon Technologies 35,000 DIODE GEN PURP 600V 29.2A TO263
IDB18E120 Infineon Technologies 21,100 RECTIFIER DIODE, 31A, 1200V