IRD3CH11DB6

Mfr.Part #
IRD3CH11DB6
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
IRD3CH11DB6
Description
DIODE GEN PURP 1.2KV 25A DIE
Stock
35000

Request A Quote(RFQ)

* Contact Name:
  Company:
* E-Mail:
  Whatsapp:
  Comment:
Manufacturer :
Infineon Technologies
Product Category :
Discrete Semiconductor Products > Diodes - Rectifiers - Single
Capacitance @ Vr, F :
-
Current - Average Rectified (Io) :
25A
Current - Reverse Leakage @ Vr :
700 nA @ 1200 V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-40°C ~ 150°C
Package / Case :
Die
Product Status :
Obsolete
Reverse Recovery Time (trr) :
190 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
Die
Voltage - DC Reverse (Vr) (Max) :
1200 V
Voltage - Forward (Vf) (Max) @ If :
2.7 V @ 25 A
Datasheets
IRD3CH11DB6

Manufacturer related products

Catalog related products

  • ROHM Semiconductor
    DIODE SCHOTTKY 650V 10A TO263AB
  • SMC Diode Solutions
    STANDARD RECTIFIER 1000V SOD-123
  • Diodes Incorporated
    DIODE SCHOTTKY 30V 200MA SOT23-3
  • onsemi
    DIODE GEN PURP 100V 200MA SOD123
  • Comchip Technology
    DIODE GEN PURP 1KV 1A DO41

Related products

Part Manufacturer Stock Description
IRD3900 Vishay 35,000 DIODE GEN PURP 100V 20A DO203AB
IRD3901 Vishay 35,000 DIODE GEN PURP 200V 20A DO203AB
IRD3901R Vishay 35,000 DIODE GEN PURP 200V 20A DO203AB
IRD3902 Vishay 35,000 DIODE GEN PURP 300V 20A DO203AB
IRD3903 Vishay 35,000 DIODE GEN PURP 400V 20A DO203AB
IRD3903R Vishay 35,000 DIODE GEN PURP 400V 20A DO203AB
IRD3909 Vishay 35,000 DIODE GEN PURP 50V 30A DO203AB
IRD3909R Vishay 35,000 DIODE GEN PURP 50V 30A DO203AB
IRD3910 Vishay 35,000 DIODE GEN PURP 100V 30A DO203AB
IRD3910R Vishay 35,000 DIODE GEN PURP 100V 30A DO203AB
IRD3911 Vishay 35,000 DIODE GEN PURP 200V 30A DO203AB
IRD3912 Vishay 35,000 DIODE GEN PURP 300V 30A DO203AB
IRD3CH101DB6 Infineon Technologies 35,000 DIODE GEN PURP 1.2KV 200A DIE
IRD3CH101DD6 Infineon Technologies 35,000 DIODE CHIP EMITTER CONTROLLED
IRD3CH101DF6 Infineon Technologies 35,000 DIODE CHIP EMITTER CONTROLLED