G4S6508Z
- Mfr.Part #
- G4S6508Z
- Manufacturer
- Global Power Technology Co. Ltd
- Package/Case
- -
- Datasheet
- G4S6508Z
- Description
- SIC SCHOTTKY DIODE 650V 8A DFN5
- Stock
- 35000
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- Manufacturer :
- Global Power Technology Co. Ltd
- Product Category :
- Discrete Semiconductor Products > Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 395pF @ 0V, 1MHz
- Current - Average Rectified (Io) :
- 30.5A
- Current - Reverse Leakage @ Vr :
- 50 µA @ 650 V
- Diode Type :
- Silicon Carbide Schottky
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 175°C
- Package / Case :
- 8-PowerTDFN
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- 0 ns
- Speed :
- No Recovery Time > 500mA (Io)
- Supplier Device Package :
- 8-DFN (4.9x5.75)
- Voltage - DC Reverse (Vr) (Max) :
- 650 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.7 V @ 8 A
- Datasheets
- G4S6508Z