NTE108-1

Manufacturer :

NTE Electronics, Inc.

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 8mA, 10V

Frequency - Transition :

600MHz

Gain :

15dB

Mounting Type :

Through Hole

Noise Figure (dB Typ @ f) :

6dB @ 60MHz

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-106-3 Domed

Power - Max :

625mW

Product Status :

Active

Supplier Device Package :

TO-106

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V