HN3C10FUTE85LF
- Mfr.Part #
- HN3C10FUTE85LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package/Case
- -
- Datasheet
- HN3C10FUTE85LF
- Description
- RF TRANS 2 NPN 12V 7GHZ US6
- Stock
- 101
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF
- Current - Collector (Ic) (Max) :
- 80mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 20mA, 10V
- Frequency - Transition :
- 7GHz
- Gain :
- 11.5dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 1.1dB @ 1GHz
- Operating Temperature :
- -
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Power - Max :
- 200mW
- Product Status :
- Active
- Supplier Device Package :
- US6
- Transistor Type :
- 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max) :
- 12V
- Datasheets
- HN3C10FUTE85LF
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