NE851M13-T3-A

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 5mA, 1V

Frequency - Transition :

4.5GHz

Gain :

4dB ~ 5.5dB @ 2GHZ

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.9dB ~ 2.5dB @ 2GHz

Operating Temperature :

-

Package / Case :

SOT-3

Power - Max :

140mW

Product Status :

Obsolete

Supplier Device Package :

M13

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

5.5V