BF799E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

35mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 20mA, 10V

Frequency - Transition :

800MHz

Gain :

-

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

3dB @ 100MHz

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

280mW

Product Status :

Obsolete

Supplier Device Package :

PG-SOT23

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

20V