BCW89,215

Manufacturer :

NXP Semiconductors

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 2mA, 5V

Frequency - Transition :

150MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

250 mW

Product Status :

Active

Supplier Device Package :

TO-236AB

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

150mV @ 2.5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

60 V