BST60,115

Manufacturer :

NXP Semiconductors

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

1 A

Current - Collector Cutoff (Max) :

50nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 500mA, 10V

Frequency - Transition :

200MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-243AA

Power - Max :

1.3 W

Product Status :

Active

Supplier Device Package :

SOT-89

Transistor Type :

PNP - Darlington

Vce Saturation (Max) @ Ib, Ic :

1.3V @ 500µA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

45 V