MJD50T4G

Manufacturer :

onsemi

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

1 A

Current - Collector Cutoff (Max) :

200µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA, 10V

Frequency - Transition :

10MHz

Mounting Type :

Surface Mount

Operating Temperature :

-65°C ~ 150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power - Max :

1.56 W

Product Status :

Active

Supplier Device Package :

DPAK

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

400 V