BFN24E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

200 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 30mA, 10V

Frequency - Transition :

70MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

360 mW

Product Status :

Not For New Designs

Supplier Device Package :

PG-SOT23

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

400mV @ 2mA, 20mA

Voltage - Collector Emitter Breakdown (Max) :

250 V