BCV29H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

500 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20000 @ 100mA, 5V

Frequency - Transition :

150MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-243AA

Power - Max :

1 W

Product Status :

Not For New Designs

Supplier Device Package :

PG-SOT89

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

1V @ 100µA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

30 V