2N5666U3
- Mfr.Part #
- 2N5666U3
- Manufacturer
- Microchip Technology
- Package/Case
- -
- Datasheet
- 2N5666U3
- Description
- TRANS NPN 200V 5A U-3
- Stock
- 35000
Request A Quote(RFQ)
- * Contact Name:
- Company:
- * E-Mail:
- Whatsapp:
- Comment:
- Manufacturer :
- Microchip Technology
- Product Category :
- Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 5 A
- Current - Collector Cutoff (Max) :
- 200nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A, 5V
- Frequency - Transition :
- -
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Package / Case :
- TO-276AA
- Power - Max :
- 1.2 W
- Product Status :
- Active
- Supplier Device Package :
- U-3 (TO-276AA)
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1A, 5A
- Voltage - Collector Emitter Breakdown (Max) :
- 200 V
- Datasheets
- 2N5666U3
Manufacturer related products
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
2N5600 | Microchip Technology | 35,000 | POWER BJT |
2N5601 | Microchip Technology | 35,000 | POWER BJT |
2N5602 | Microchip Technology | 35,000 | POWER BJT |
2N5603 | Microchip Technology | 35,000 | POWER BJT |
2N5604 | Microchip Technology | 35,000 | POWER BJT |
2N5605 | Microchip Technology | 35,000 | POWER BJT |
2N5606 | Microchip Technology | 35,000 | POWER BJT |
2N5607 | Microchip Technology | 35,000 | POWER BJT |
2N5608 | Microchip Technology | 35,000 | POWER BJT |
2N5609 | Microchip Technology | 35,000 | POWER BJT |
2N5610 | Microchip Technology | 35,000 | POWER BJT |
2N5611 | Microchip Technology | 35,000 | POWER BJT |
2N5612 | Microchip Technology | 35,000 | POWER BJT |
2N5613 | Microchip Technology | 35,000 | POWER BJT |
2N5614 | Microchip Technology | 35,000 | POWER BJT |