2SB1481(TOJS,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

4 A

Current - Collector Cutoff (Max) :

2µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 3A, 2V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3 Full Pack

Power - Max :

2 W

Product Status :

Obsolete

Supplier Device Package :

TO-220NIS

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 6mA, 3A

Voltage - Collector Emitter Breakdown (Max) :

100 V