2SC4604,F(J

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

3 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 100mA, 2V

Frequency - Transition :

100MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 Long Body

Power - Max :

900 mW

Product Status :

Obsolete

Supplier Device Package :

TO-92MOD

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 75mA, 1.5A

Voltage - Collector Emitter Breakdown (Max) :

50 V