BC557,112

Manufacturer :

NXP Semiconductors

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

125 @ 2mA, 5V

Frequency - Transition :

100MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power - Max :

500 mW

Product Status :

Obsolete

Supplier Device Package :

TO-92-3

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

45 V