PDTB143EQA147

Manufacturer :

NXP Semiconductors

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

500 mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 50mA, 5V

Frequency - Transition :

150 MHz

Mounting Type :

Surface Mount

Package / Case :

3-XDFN Exposed Pad

Power - Max :

325 mW

Product Status :

Active

Resistor - Base (R1) :

4.7 kOhms

Resistor - Emitter Base (R2) :

4.7 kOhms

Supplier Device Package :

DFN1010D-3

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

100mV @ 2.5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

50 V