PDTC114TE,115

Manufacturer :

NXP Semiconductors

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1mA, 5V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Package / Case :

SC-75, SOT-416

Power - Max :

150 mW

Product Status :

Obsolete

Resistor - Base (R1) :

10 kOhms

Resistor - Emitter Base (R2) :

-

Supplier Device Package :

SC-75

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50 V