RN2101CT(TPL3)

Mfr.Part #
RN2101CT(TPL3)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package/Case
-
Datasheet
RN2101CT(TPL3)
Description
TRANS PREBIAS PNP 20V 0.05A CST3
Stock
35000

Request A Quote(RFQ)

* Contact Name:
  Company:
* E-Mail:
  Whatsapp:
  Comment:
Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased
Current - Collector (Ic) (Max) :
50 mA
Current - Collector Cutoff (Max) :
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 10mA, 5V
Frequency - Transition :
-
Mounting Type :
Surface Mount
Package / Case :
SC-101, SOT-883
Power - Max :
50 mW
Product Status :
Obsolete
Resistor - Base (R1) :
4.7 kOhms
Resistor - Emitter Base (R2) :
4.7 kOhms
Supplier Device Package :
CST3
Transistor Type :
PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic :
150mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max) :
20 V
Datasheets
RN2101CT(TPL3)

Manufacturer related products

  • Toshiba Electronic Devices and Storage Corporation
    TVS DIODE 3.6VWM 15VC CST2
  • Toshiba Electronic Devices and Storage Corporation
    TVS DIODE 3.6VWM 24VC SL2
  • Toshiba Electronic Devices and Storage Corporation
    TVS DIODE 3.5VWM SOD923
  • Toshiba Electronic Devices and Storage Corporation
    TVS DIODE 5VWM 9VC SOD923
  • Toshiba Electronic Devices and Storage Corporation
    TVS DIODE 12VWM SOD923

Catalog related products

Related products

Part Manufacturer Stock Description
RN21-I/RM Microchip Technology 35,000 RX TXRX MODULE BLUETOOTH SMD
RN2101,LF(CT Toshiba Electronic Devices and Storage Corporation 35,000 TRANS PREBIAS PNP 50V 0.1A SSM
RN2101,LXHF(CT Toshiba Electronic Devices and Storage Corporation 35,000 AUTO AEC-Q SINGLE PNP Q1BSR=4.7K
RN2101ACT(TPL3) Toshiba Electronic Devices and Storage Corporation 35,000 TRANS PREBIAS PNP 50V 0.08A CST3
RN2101MFV,L3F(CT Toshiba Electronic Devices and Storage Corporation 6,638 TRANS PREBIAS PNP 50V 0.1A VESM
RN2101MFV,L3XHF(CT Toshiba Electronic Devices and Storage Corporation 8,000 AUTO AEC-Q PNP Q1BSR=4.7K, Q1BER
RN2102,LF(CT Toshiba Electronic Devices and Storage Corporation 35,000 TRANS PREBIAS PNP 50V 0.1A SSM
RN2102,LXHF(CT Toshiba Electronic Devices and Storage Corporation 5,000 AUTO AEC-Q SINGLE PNP Q1BSR=10K,
RN2102ACT(TPL3) Toshiba Electronic Devices and Storage Corporation 35,000 TRANS PREBIAS PNP 50V 0.08A CST3
RN2102CT(TPL3) Toshiba Electronic Devices and Storage Corporation 35,000 TRANS PREBIAS PNP 20V 0.05A CST3
RN2102MFV,L3F(CT Toshiba Electronic Devices and Storage Corporation 35,000 TRANS PREBIAS PNP 50V 0.1A VESM
RN2102MFV,L3XHF(CT Toshiba Electronic Devices and Storage Corporation 35,000 AUTO AEC-Q PNP Q1BSR=10K, Q1BER=
RN2103(T5L,F,T) Toshiba Electronic Devices and Storage Corporation 1,715 TRANS PREBIAS PNP 50V 0.1A SSM
RN2103,LF(CT Toshiba Electronic Devices and Storage Corporation 35,000 TRANS PREBIAS PNP 50V 0.1A SSM
RN2103,LXHF(CT Toshiba Electronic Devices and Storage Corporation 35,000 AUTO AEC-Q TR PNP Q1BSR=22KOHM,