BSD840NH6327XTSA1

Mfr.Part #
BSD840NH6327XTSA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
BSD840NH6327XTSA1
Description
MOSFET 2N-CH 20V 0.88A SOT363
Stock
135079

Request A Quote(RFQ)

* Contact Name:
  Company:
* E-Mail:
  Whatsapp:
  Comment:
Manufacturer :
Infineon Technologies
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
880mA
Drain to Source Voltage (Vdss) :
20V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
0.26nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds :
78pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
6-VSSOP, SC-88, SOT-363
Power - Max :
500mW
Product Status :
Active
Rds On (Max) @ Id, Vgs :
400mOhm @ 880mA, 2.5V
Supplier Device Package :
PG-SOT363-PO
Vgs(th) (Max) @ Id :
750mV @ 1.6µA
Datasheets
BSD840NH6327XTSA1

Manufacturer related products

Catalog related products

  • EPC
    GANFET 2NCH 120V 3.4A DIE
  • EPC
    GAN TRANS SYMMETRICAL HALF BRIDG
  • ROHM Semiconductor
    MOSFET 2N-CH 1200V 300A
  • Toshiba Electronic Devices and Storage Corporation
    MOSFET 2 N-CHANNEL 20V 250MA US6
  • Diodes Incorporated
    MOSFET N/P-CH 20V SOT26

Related products

Part Manufacturer Stock Description
BSD816SN L6327 Infineon Technologies 35,000 SMALL SIGNAL N-CHANNEL MOSFET
BSD816SNH6327 Infineon Technologies 35,000 MOSFET N-CH 20V 1.4A SOT363-6
BSD816SNH6327XTSA1 Infineon Technologies 35,000 MOSFET N-CH 20V 1.4A SOT363-6
BSD816SNL6327 Infineon Technologies 35,000 SMALL SIGNAL N-CHANNEL MOSFET
BSD816SNL6327HTSA1 Infineon Technologies 35,000 MOSFET N-CH 20V 1.4A SOT363-6
BSD840N L6327 Infineon Technologies 35,000 MOSFET 2N-CH 20V 0.88A SOT363