SI1026X-T1-GE3

Mfr.Part #
SI1026X-T1-GE3
Manufacturer
Vishay
Package/Case
-
Datasheet
SI1026X-T1-GE3
Description
MOSFET 2N-CH 60V 0.305A SC89-6
Stock
423565

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Manufacturer :
Vishay
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
305mA
Drain to Source Voltage (Vdss) :
60V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
30pF @ 25V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
SOT-563, SOT-666
Power - Max :
250mW
Product Status :
Active
Rds On (Max) @ Id, Vgs :
1.4Ohm @ 500mA, 10V
Supplier Device Package :
SC-89 (SOT-563F)
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Datasheets
SI1026X-T1-GE3

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