BSM300D12P3E005

Mfr.Part #
BSM300D12P3E005
Manufacturer
ROHM Semiconductor
Package/Case
-
Datasheet
BSM300D12P3E005
Description
SILICON CARBIDE POWER MODULE. B
Stock
6

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Manufacturer :
ROHM Semiconductor
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
300A (Tc)
Drain to Source Voltage (Vdss) :
1200V (1.2kV)
FET Feature :
Silicon Carbide (SiC)
FET Type :
2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
14000pF @ 10V
Mounting Type :
Chassis Mount
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
Module
Power - Max :
1260W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
-
Supplier Device Package :
Module
Vgs(th) (Max) @ Id :
5.6V @ 91mA
Datasheets
BSM300D12P3E005

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