SQJ200EP-T1_GE3
- Mfr.Part #
- SQJ200EP-T1_GE3
- Manufacturer
- Vishay
- Package/Case
- -
- Datasheet
- SQJ200EP-T1_GE3
- Description
- MOSFET 2N-CH 20V 20A/60A PPAK SO
- Stock
- 35000
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- Manufacturer :
- Vishay
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 20A, 60A
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- Standard
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 975pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- PowerPAK® SO-8 Dual
- Power - Max :
- 27W, 48W
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 8.8mOhm @ 16A, 10V
- Supplier Device Package :
- PowerPAK® SO-8 Dual Asymmetric
- Vgs(th) (Max) @ Id :
- 2V @ 250µA
- Datasheets
- SQJ200EP-T1_GE3
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