BSH205G2AR

Manufacturer :

Nexperia

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.6A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

7 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

421 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

610mW (Ta), 10W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

118mOhm @ 2.6A, 4.5V

Supplier Device Package :

TO-236AB

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

900mV @ 250µA