TPH9R506PL,LQ

Mfr.Part #
TPH9R506PL,LQ
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package/Case
-
Datasheet
TPH9R506PL,LQ
Description
MOSFET N-CH 60V 34A 8SOP
Stock
10824

Request A Quote(RFQ)

* Contact Name:
  Company:
* E-Mail:
  Whatsapp:
  Comment:
Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
34A (Tc)
Drain to Source Voltage (Vdss) :
60 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1910 pF @ 30 V
Mounting Type :
Surface Mount
Operating Temperature :
175°C
Package / Case :
8-PowerVDFN
Power Dissipation (Max) :
830mW (Ta), 81W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
9.5mOhm @ 17A, 10V
Supplier Device Package :
8-SOP Advance (5x5)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.5V @ 200µA
Datasheets
TPH9R506PL,LQ

Manufacturer related products

  • Toshiba Electronic Devices and Storage Corporation
    TVS DIODE 3.6VWM 15VC CST2
  • Toshiba Electronic Devices and Storage Corporation
    TVS DIODE 3.6VWM 24VC SL2
  • Toshiba Electronic Devices and Storage Corporation
    TVS DIODE 3.5VWM SOD923
  • Toshiba Electronic Devices and Storage Corporation
    TVS DIODE 5VWM 9VC SOD923
  • Toshiba Electronic Devices and Storage Corporation
    TVS DIODE 12VWM SOD923

Catalog related products

Related products

Part Manufacturer Stock Description
TPH9R00CQH,LQ Toshiba Electronic Devices and Storage Corporation 35,000 UMOS10 SOP-ADV(N) 150V 9MOHM