SIJA22DP-T1-GE3
- Mfr.Part #
- SIJA22DP-T1-GE3
- Manufacturer
- Vishay
- Package/Case
- -
- Datasheet
- SIJA22DP-T1-GE3
- Description
- MOSFET N-CH 25V 64A/201A PPAK
- Stock
- 6965
Request A Quote(RFQ)
- * Contact Name:
- Company:
- * E-Mail:
- Whatsapp:
- Comment:
- Manufacturer :
- Vishay
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 64A (Ta), 201A (Tc)
- Drain to Source Voltage (Vdss) :
- 25 V
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 125 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6500 pF @ 15 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® SO-8
- Power Dissipation (Max) :
- 4.8W (Ta), 48W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 0.74mOhm @ 20A, 10V
- Supplier Device Package :
- PowerPAK® SO-8
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- +20V, -16V
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Datasheets
- SIJA22DP-T1-GE3
Manufacturer related products
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
SIJA52ADP-T1-GE3 | Vishay | 35,000 | MOSFET N-CH 40V 41.6A/131A PPAK |
SIJA52DP-T1-GE3 | Vishay | 35,000 | MOSFET N-CH 40V 60A PPAK SO-8 |
SIJA54ADP-T1-GE3 | Vishay | 35,000 | N-CHANNEL 40 V (D-S) MOSFET POWE |
SIJA54DP-T1-GE3 | Vishay | 35,000 | MOSFET N-CH 40V 60A PPAK SO-8 |
SIJA58ADP-T1-GE3 | Vishay | 35,000 | MOSFET N-CH 40V 32.3A/109A PPAK |
SIJA58DP-T1-GE3 | Vishay | 35,000 | MOSFET N-CH 40V 60A PPAK SO-8 |
SIJA72ADP-T1-GE3 | Vishay | 35,000 | MOSFET N-CH 40V 27.9A/96A PPAK |
SIJA74DP-T1-GE3 | Vishay | 35,000 | MOSFET N-CH 40V 24A/81.2A PPAK |