RQ3E180BNTB1

Mfr.Part #
RQ3E180BNTB1
Manufacturer
ROHM Semiconductor
Package/Case
-
Datasheet
RQ3E180BNTB1
Description
NCH 30V 39A MIDDLE POWER MOSFET:
Stock
3000

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Manufacturer :
ROHM Semiconductor
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
18A (Ta), 39A (Tc)
Drain to Source Voltage (Vdss) :
30 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
3500 pF @ 15 V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
8-PowerVDFN
Power Dissipation (Max) :
2W (Ta), 20W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
3.9mOhm @ 18A, 10V
Supplier Device Package :
8-HSMT (3.2x3)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Datasheets
RQ3E180BNTB1

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