RFW2N06RLE

Manufacturer :

Harris Corporation

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

30 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

535 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation (Max) :

1.09W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

200mOhm @ 2A, 5V

Supplier Device Package :

4-DIP, Hexdip

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+10V, -5V

Vgs(th) (Max) @ Id :

2V @ 250µA