TW107N65C,S1F
- Mfr.Part #
- TW107N65C,S1F
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package/Case
- -
- Datasheet
- TW107N65C,S1F
- Description
- G3 650V SIC-MOSFET TO-247 107MO
- Stock
- 125
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 20A (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 18V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 21 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 600 pF @ 400 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 175°C
- Package / Case :
- TO-247-3
- Power Dissipation (Max) :
- 76W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 145mOhm @ 10A, 18V
- Supplier Device Package :
- TO-247
- Technology :
- SiC (Silicon Carbide Junction Transistor)
- Vgs (Max) :
- +25V, -10V
- Vgs(th) (Max) @ Id :
- 5V @ 1.2mA
- Datasheets
- TW107N65C,S1F