TK6P65W,RQ

Mfr.Part #
TK6P65W,RQ
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package/Case
-
Datasheet
TK6P65W,RQ
Description
MOSFET N-CH 650V 5.8A DPAK
Stock
1294

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
5.8A (Ta)
Drain to Source Voltage (Vdss) :
650 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
390 pF @ 300 V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) :
60W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
1.05Ohm @ 2.9A, 10V
Supplier Device Package :
DPAK
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
3.5V @ 180µA
Datasheets
TK6P65W,RQ

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