TPH2R306NH1,LQ
- Mfr.Part #
- TPH2R306NH1,LQ
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package/Case
- -
- Datasheet
- TPH2R306NH1,LQ
- Description
- UMOS9 SOP-ADV(N) PD=170W F=1MHZ
- Stock
- 4808
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- Comment:
- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 136A (Tc)
- Drain to Source Voltage (Vdss) :
- 60 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 6.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 72 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6100 pF @ 30 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C
- Package / Case :
- 8-PowerTDFN
- Power Dissipation (Max) :
- 800mW (Ta), 170W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 2.3mOhm @ 50A, 10V
- Supplier Device Package :
- 8-SOP Advance (5x5.75)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Datasheets
- TPH2R306NH1,LQ
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