SCT3030AW7TL

Mfr.Part #
SCT3030AW7TL
Manufacturer
ROHM Semiconductor
Package/Case
-
Datasheet
SCT3030AW7TL
Description
SICFET N-CH 650V 70A TO263-7
Stock
442

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Manufacturer :
ROHM Semiconductor
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
70A (Tc)
Drain to Source Voltage (Vdss) :
650 V
Drive Voltage (Max Rds On, Min Rds On) :
-
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds :
1526 pF @ 500 V
Mounting Type :
Surface Mount
Operating Temperature :
175°C (TJ)
Package / Case :
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Power Dissipation (Max) :
267W
Product Status :
Active
Rds On (Max) @ Id, Vgs :
39mOhm @ 27A, 18V
Supplier Device Package :
TO-263-7
Technology :
SiCFET (Silicon Carbide)
Vgs (Max) :
+22V, -4V
Vgs(th) (Max) @ Id :
5.6V @ 13.3mA
Datasheets
SCT3030AW7TL

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