G1006LE

Mfr.Part #
G1006LE
Manufacturer
Goford Semiconductor
Package/Case
-
Datasheet
G1006LE
Description
N100V,RD(MAX)<150M@10V,RD(MAX)<1
Stock
7788

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Manufacturer :
Goford Semiconductor
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
3A (Tc)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
622 pF @ 50 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max) :
1.5W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
150mOhm @ 3A, 10V
Supplier Device Package :
SOT-23-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Datasheets
G1006LE

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