PJW2P10A_R2_00001
- Mfr.Part #
- PJW2P10A_R2_00001
- Manufacturer
- PANJIT
- Package/Case
- -
- Datasheet
- PJW2P10A_R2_00001
- Description
- 100V P-CHANNEL ENHANCEMENT MODE
- Stock
- 346
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- Comment:
- Manufacturer :
- PANJIT
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 1.5A (Ta)
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 448 pF @ 15 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-261-4, TO-261AA
- Power Dissipation (Max) :
- 3.1W (Ta)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 650mOhm @ 1.5A, 10V
- Supplier Device Package :
- SOT-223
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
- Datasheets
- PJW2P10A_R2_00001