G2312
- Mfr.Part #
- G2312
- Manufacturer
- Goford Semiconductor
- Package/Case
- -
- Datasheet
- G2312
- Description
- N20V,RD(MAX)<18M@10V,RD(MAX)<20M
- Stock
- 2890
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- Manufacturer :
- Goford Semiconductor
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 5A
- Drain to Source Voltage (Vdss) :
- 20 V
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 11 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 780 pF @ 10 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation (Max) :
- 1.25W
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 18mOhm @ 4.2A, 10V
- Supplier Device Package :
- SOT-23
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±12V
- Vgs(th) (Max) @ Id :
- 1V @ 250µA
- Datasheets
- G2312