630A

Manufacturer :

Goford Semiconductor

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

11A

Drain to Source Voltage (Vdss) :

200 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

11.8 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

509 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power Dissipation (Max) :

83W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

280mOhm @ 4.5A, 10V

Supplier Device Package :

TO-252 (DPAK)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA