18N20

Manufacturer :

Goford Semiconductor

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

18A (Tj)

Drain to Source Voltage (Vdss) :

200 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

17.7 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

836 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max) :

65.8W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

160mOhm @ 9A, 10V

Supplier Device Package :

TO-252

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

3V @ 250µA