P3M173K0T3

Manufacturer :

PN Junction Semiconductor

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4A

Drain to Source Voltage (Vdss) :

1700 V

Drive Voltage (Max Rds On, Min Rds On) :

15V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-220-2

Power Dissipation (Max) :

75W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

2.6Ohm @ 0.6A, 15V

Supplier Device Package :

TO-220-2L

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+19V, -8V

Vgs(th) (Max) @ Id :

2.2V @ 0.6mA (Typ)