IMBF170R1K0M1XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5.2A (Tc)

Drain to Source Voltage (Vdss) :

1700 V

Drive Voltage (Max Rds On, Min Rds On) :

12V, 15V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

5 nC @ 12 V

Input Capacitance (Ciss) (Max) @ Vds :

275 pF @ 1000 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Power Dissipation (Max) :

68W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1000mOhm @ 1A, 15V

Supplier Device Package :

PG-TO263-7-13

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+20V, -10V

Vgs(th) (Max) @ Id :

5.7V @ 1.1mA