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RFD3N08LSM9A
- Mfr.Part #
- RFD3N08LSM9A
- Manufacturer
- Harris Corporation
- Package/Case
- -
- Datasheet
- RFD3N08LSM9A
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 2425
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- Manufacturer :
- Harris Corporation
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 3A (Tc)
- Drain to Source Voltage (Vdss) :
- 80 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 5V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 8.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 125 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation (Max) :
- 30W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 800mOhm @ 3A, 5V
- Supplier Device Package :
- TO-252-3 (DPAK)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±10V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
- Datasheets
- RFD3N08LSM9A
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