RFM6P10

Mfr.Part #
RFM6P10
Manufacturer
Harris Corporation
Package/Case
-
Datasheet
RFM6P10
Description
P-CHANNEL POWER MOSFET
Stock
3064

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Manufacturer :
Harris Corporation
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
6A (Tc)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
800 pF @ 25 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-220-3
Power Dissipation (Max) :
60W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
600mOhm @ 6A, 10V
Supplier Device Package :
TO-220AB
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA
Datasheets
RFM6P10

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