IMW65R057M1HXKSA1
- Mfr.Part #
- IMW65R057M1HXKSA1
- Manufacturer
- Infineon Technologies
- Package/Case
- -
- Datasheet
- IMW65R057M1HXKSA1
- Description
- SILICON CARBIDE MOSFET, PG-TO247
- Stock
- 88
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 35A (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 18V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 28 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 930 pF @ 400 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-247-3
- Power Dissipation (Max) :
- 133W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 74mOhm @ 16.7A, 18V
- Supplier Device Package :
- PG-TO247-3-41
- Technology :
- SiCFET (Silicon Carbide)
- Vgs (Max) :
- +20V, -2V
- Vgs(th) (Max) @ Id :
- 5.7V @ 5mA
- Datasheets
- IMW65R057M1HXKSA1
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