GCMS080B120S1-E1
- Mfr.Part #
- GCMS080B120S1-E1
- Manufacturer
- SemiQ
- Package/Case
- -
- Datasheet
- GCMS080B120S1-E1
- Description
- SIC 1200V 80M MOSFET & 10A SBD S
- Stock
- 10
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- Manufacturer :
- SemiQ
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 30A (Tc)
- Drain to Source Voltage (Vdss) :
- 1200 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 20V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 58 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1374 pF @ 1000 V
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- SOT-227-4, miniBLOC
- Power Dissipation (Max) :
- 142W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 100mOhm @ 20A, 20V
- Supplier Device Package :
- SOT-227
- Technology :
- SiCFET (Silicon Carbide)
- Vgs (Max) :
- +25V, -10V
- Vgs(th) (Max) @ Id :
- 4V @ 10mA
- Datasheets
- GCMS080B120S1-E1