MSCSM120DAM31CTBL1NG

Manufacturer :

Microchip Technology

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

79A

Drain to Source Voltage (Vdss) :

1200 V

Drive Voltage (Max Rds On, Min Rds On) :

20V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

232 nC @ 20 V

Input Capacitance (Ciss) (Max) @ Vds :

3020 pF @ 1000 V

Mounting Type :

Chassis Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

Module

Power Dissipation (Max) :

310W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

31mOhm @ 40A, 20V

Supplier Device Package :

-

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+25V, -10V

Vgs(th) (Max) @ Id :

2.8V @ 1mA