TPN4R712MD,L1Q
- Mfr.Part #
- TPN4R712MD,L1Q
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package/Case
- -
- Datasheet
- TPN4R712MD,L1Q
- Description
- MOSFET P-CH 20V 36A 8TSON
- Stock
- 35000
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 36A (Tc)
- Drain to Source Voltage (Vdss) :
- 20 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 2.5V, 4.5V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 65 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4300 pF @ 10 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- 8-PowerVDFN
- Power Dissipation (Max) :
- 42W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 4.7mOhm @ 18A, 4.5V
- Supplier Device Package :
- 8-TSON Advance (3.1x3.1)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±12V
- Vgs(th) (Max) @ Id :
- 1.2V @ 1mA
- Datasheets
- TPN4R712MD,L1Q
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