SCT040H65G3AG
- Mfr.Part #
- SCT040H65G3AG
- Manufacturer
- STMicroelectronics
- Package/Case
- -
- Datasheet
- SCT040H65G3AG
- Description
- AUTOMOTIVE-GRADE SILICON CARBIDE
- Stock
- 35000
Request A Quote(RFQ)
- * Contact Name:
- Company:
- * E-Mail:
- Whatsapp:
- Comment:
- Manufacturer :
- STMicroelectronics
- Product Category :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 30A (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 15V, 18V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 39.5 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 920 pF @ 400 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
- Power Dissipation (Max) :
- 221W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 55mOhm @ 20A, 18V
- Supplier Device Package :
- H2PAK-7
- Technology :
- SiC (Silicon Carbide Junction Transistor)
- Vgs (Max) :
- +18V, -5V
- Vgs(th) (Max) @ Id :
- 4.2V @ 1mA
- Datasheets
- SCT040H65G3AG
Manufacturer related products
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
SCT011H75G3AG | STMicroelectronics | 35,000 | MOSFET 750 V 110A H2PAK7 |